Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe. 进一步分析认为,这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。
It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance. 结果表明,当激光器包含多个量子阱时,量子阱内部的载流子密度的不均匀性会损害激光器的性能。
The result is clarified through analysis on the variation of the PIN diode's carrier density in I-region, combined with the existed theoretical model. 对得到的仿真结果,论文结合已有的PIN限幅器理论模型,通过分析限幅器核心器件&PIN管I区载流子浓度的变化,进行了理论分析。
The higher carrier density in the type-II quantum well results in higher Auger recombination rate as temperature increases. 第二型量子井中较高的载子浓度可能是高温时欧杰复合速率增加的原因。
The results suggest this the phenomenon to be caused by the Hg vacancies and the abnormal red-shift is related to the composition and the carrier density of the materials. 结果表明该现象是由材料中Hg空位作为受主能级存在而形成的,红移幅度与样品组分/载流子浓度有关。
The electrical potential, field and carrier density in emission layer of single layer organic light-emitting devices are numerically studied based on the trapped charge limited conduction theory. 以陷阱电荷限制传导理论为基础,用数值方法研究了单层有机电致发光器件发光层中电势、电场和载流子密度的空间分布。
The linear relation of gain on carrier density in the conventional rate equation is replaced by the logarithmic relation ( gain saturation effect) for quantum well ( QW) lasers. The static and dynamic behaviors changes brought by this revision are analyzed. 用量子阱激光器增益与载流子浓度的对数关系(增益饱和效应)取代了体材料的线性关系,得到了适用于量子阱结构的速率方程,详细分析和计算了这一修正的影响。
The different carrier density and layers number of DBR will affect the gain characteristic and the wavelength of the peak gain will shift with the variation of position of the quantum well stacks in active region. 研究了不同载流子浓度、DBR膜层数对增益特性的影响,发现了有源区内量子阱堆位置的改变将导致增益峰值波长移动。
The simulation results of the transient response, the phase diagram of carrier density and photon density are directly given by means of computer and Matlab software. 借助计算机手段,运用Matlab软件直接给出了半导体微腔激光器瞬态响应的仿真结果及载流子密度和光子密度的相图。
Analyzing the carrier density and photon density of VCL in active region, the physical mechanism of gain clamping was revealed. 分析有源区内载流子和VCL光子密度的变化,揭示了增益钳制的物理机理。
Experimental results have proved that size effect exists for electrical conductivity, optical constants, permittivity, permeability and carrier density in ultrathin Al Ti and Fe films as the thickness of the film decreases to nanometer size range. 实验结果表明,超薄Al、Ti、Fe膜在纳米尺寸范围内,随厚度变化,电导率、光学常数、介电常数、磁导率、载流子浓度和等离子体共振均存在尺寸效应。
The results show that in highly doped substrate case, the carrier density and subthreshold current are lowered and threshold voltage is raised considerably due to QME, but the subthreshold swing factor ( S) is entirely not influenced. 计算结果表明:在高掺杂浓度衬底时,量子化效应导致载流子浓度和亚阈区电流的显著降低和开启电压的升高,而对亚阈区斜率因子(S)没有明显的影响。
Based on the charge transfer model, and considering the carrier localization and ion-cluster effect resulting from Fe substitution on Cu ( 1) site, we have discussed the change of carrier density caused by the oxygen content and Fe doping concentration. 从电荷转移模型出发,结合掺杂离子引起的载流子局域化和离子团簇效应,对载流子浓度随掺杂量和氧含量的变化从微观结构方面进行了讨论。
From the models of SOA-XGM converter and segmented SOA, the interior carrier density and output extinction ratio have been simulated by using the carrier rate equations and the propagation equations of signal and probe inside SOA. 本文先从SOA-XGM型波长转换器模型和SOA分段模型出发,利用载流子速率方程以及信号光和探测光在SOA中的传输方程,对SOA内部载流子浓度变化规律和波长转换器输出消光比退化做仿真研究;
The mechanism of inorganic filler may be in two ways: one is supplying deep electron traps that can effectively reduce carrier mobility and carrier density in LDPE. 无机填料的作用机理可能主要有两个方面:一是提供了深电子陷阱,使载流子迁移率和密度降低;
In this paper, the condition under which the surface excess minority carrier density may be treated as a constant is also analysed. 在文中,我们也分析了可以把表面非平衡少子浓度作常数处理的条件。
According to pulse transmission equation and carrier density equation, performance of wavelength converters based on cross-gain modulation in semiconductor optical amplifiers in counter propagating mode were studied in terms of extinction ratio and chirp of the converted signal. 从脉冲传输方程和载流子密度方程出发,详细分析了相向工作方式下交叉增益调制型波长转换器转换后光的消光比和啁啾特性。
In addition, the high carrier density can suppress the excitonic peaks. 另外,增加载流子密度能抑制激子峰。
Using steady state rate equations, closed form solutions for carrier density in the active layer is deduced. 利用稳态速率方程,导出了激光器有源区载流子密度与偏置电流及输入信号光功率关系的隐函数表达式。
But when we doped Na element, the carrier density of the material ascended, and the electrical conductivity of the sample made improvements, its resistivity has up to 10-3 at 600k. 掺Na后,Ca3Co2O6的载流子浓度提高了,导电率有了明显的改善,电阻率在600K时达到了10~(-3)数量级。
Secondly, mathematical model of time-resolved carrier density has been established on the base of semiconductor rate equation theory. 然后基于半导体的速率方程理论,建立了载流子浓度随时间变化的数学模型。
More specifically, if the perturbation comes from a loss ( or the threshold carrier density) variation, it is likely that the small-signal analysis becomes invalid. 具体的说,如果扰动来自于损耗(或者说阈值载流子密度)的变化,此时小信号分析可能会失效。
Inaddition, taking different line shape functions, we calculate the linear and differential gain of the twolasers corresponding to the different carrier density. 然后,在选取不同的线形函数的情况下分别计算了对应于不同的注入载流予浓度时的这两种激光器的线性增益和微分增益。
As a special case, the oscillation behaviors of the absorptive device with two equal-length segments: threshold conditions, carrier density and wavelength tuning range have been analyzed. 作为特例,分析了吸收型器件在两段等长情况下的阈值载流子浓度变化和波长调谐特性。
The differential gain coefficient decreases with increased sheet carrier density. 微分增益系数随薄层载流子密度的增加而降低。
The influences of assist light on the steady-state carrier density and field intensity distributions of the DFB-SOA are studied respectively. 同时,我们还分析辅助光对DFB-SOA的稳态载流子浓度分布和光场分布的影响。
This paper complete a numerical simulation of the theoretical model of an organic solar cell by using matlab, and it can be clearly demonstrated the current-voltage characteristics of the device, the carrier density distribution and so on. 本文通过利用matlab编程,完成了一个有机太阳能电池理论模型的数值模拟,它可以清晰的展示出器件的电流电压特性、载流子密度分布等。
The propagation equation for the optical field and the rate equation for the carrier density in SOA are derived. 推导了SOA中最基本的光场传输方程和载流子速率方程,讨论了SOA中的各种非线性效应。
Based on multiple-beam interference, using the change of carrier density in FP-SOA, the filter with large tuning range is obtained. 此方案由多光束干涉特性提出,利用FP-SOA中载流子浓度的改变,实现了大可调谐范围的复系数微波光子学滤波器。
Combined with the carrier density diffusion equation and the photon density distribution model to investigate the location of COD. And analyzes the thermal effects damage and field effect damage of thin film, in order to avoid the occurrence of COD on the cavity surface. 3. 结合载流子密度扩散方程以及光子密度分布模型,探讨COD发生位置,同时分析了腔面膜热效应损伤和场效应损伤,探讨如何避免腔面COD的发生。